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savantic semiconductor product specification silicon npn power transistors 2SC4585 d escription with to-3pml package high voltage,high speed switching power transistor pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1200 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i cm collector current-peak 20 a i b base current 4 a i bm base current-peak 8 a p c collector power dissipation t c =25 85 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.47 /w fig.1 simplified outline (to-3pml) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4585 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =5a; i b =1 a 1.0 v v besat base-emitter saturation voltage i c =5a; i b =1 a 1.5 v v ceo(sus) collector-emitter sustaining voltage i c =0.2a;i b =0 800 v i ebo emitter cut-off current at rated voltage 0.1 ma i cbo collector cut-off current i ceo collector cut-off current at rated voltage 0.1 ma h fe-1 dc current gain i c =5 a ; v ce =5v 8 h fe-2 dc current gain i c =1ma ; v ce =5v 7 f t transition frequency i c =1a ; v ce =10v 8 mhz switching times t on turn-on time 0.5 s t stg storage time 3.5 s t f fall time i c =5a;r l =50 b i b1 =1a; i b2 =2a v bb2 =4v 0.3 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC4585 package outline fig.2 outline dimensions

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